CSD1047F Datasheet PDF | Continental Device India

Continental Device India CSD1047F

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSD1047F
Datasheet	CSD1047F Download
Manufacturer	Continental Device India
Description	TO-3P Fully Isolated Plastic Package Transistor
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ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless specified otherwise )

DESCRIPTION

SYMBOL VALUE VCBO Collector -Base Voltage(open emitter) VCEO Collector -Emitter Voltage(open base) VEBO Emitter Base Voltage(open collector) IC Collector Current IC Collector Current (Pulse) Ptot Total Power Dissipation upto Tc=25º C Tj Junction Temperature Tstg Storage Temperature

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION VCB=80V, IE=0 ICBO Collector Cut off Current VEB=4V, IC=0 IEBO Emitter Cut off Current Breakdown Voltages VCEO VCBO VEBO IC=10mA, IB=0 IC=5mA, IE=0 IE=5mA, IC=0 Saturation Voltage m o .c U 4 t e e h S a t a .D w w w MIN 160 160 6.0 TYP -55 to +150 MIN TYP 140 160 6.0 VCE(sat) VBE (on) hFE fT Co IC=5A, IB=0.5A IC=1A, VCE= 5V IC=1A,VCE=5V ** IC=6A,VCE=5V IC=1A,VCE=5V VCB E MAX 12 15 90 150 UNIT V V V A A W ºC ºC MAX 0.1 0.1 UNIT mA mA V V V Base Emitter on Voltage DC Current Gain Transition frequency Output Capacitance * Pulse Tests : Pulse Width = 20µs ** hFE Classification : O : 60-120 Continental Device India Limited Data Sheet m o 60 c .