CSD1134 Datasheet | Continental Device India

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany TO-220 Plastic Package CSB857, CSB858 CSD1133, CSD1134 .. CSB857, 858 PNP PLASTIC POWER TRANSISTORS CSD1133, 1134 NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. 1 2 N L 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 ABSOLUTE MAXIMUM RATINGS 857 1133 max. 70 max. 50 max. max. max. max. min. max. 857 1133 max. 70 max. 50 max. 858 1134 70 V 60 V 4.0 A 40 W 150 °C 1.0 60 320 858 1134 70 V 60 V 5.0 V V Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 2 A; IB = 200 m A D.C. current gain IC = 1 A; VCE = 4 V All diminsions in mm. Data Sheet VCBO VCEO IC Ptot Tj VCEsat h FE RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO Continental Device India Limited Page 1 of 3 CSB857, CSB858 CSD1133, CSD1134 .. Collector current Collector current (Peak value) Total power dissipation up to TC = 25°C Junction temperature Storage temperature CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 50V Breakdown voltages IC = 50 m A; IB = 0 IC = 10 µA; IE = 0 IE = 10 µA; IC = 0 Saturation voltage IC = 2 A; IB = 0.2 A Base emitter on voltage IC = 1 A; VCE = 4 V D.C. current gain IC = 0.1 A; VCE = 4 V IC = 1.0 A; VCE = 4 V- - Transition frequency IC = 0.5 A; VCE = 4 V IC IC Ptot Tj Tstg max. max. max. max. 4.0 8.0 40 150 - 65 to +150 A A W ºC ºC 857 1133 ICBO VCEO VCBO VEBO VCEsat- VBE(on)- h FE- h FE- max. min. min. min....