CSD1489 Datasheet PDF | Continental Device India

Continental Device India CSD1489

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSD1489
Datasheet	CSD1489 Download
Manufacturer	Continental Device India
Description	NPN EPITAXIAL PLANAR SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS

(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL VALUE BVCBO 20 Collector -Base Voltage BVCEO 16 Collector Emitter Voltage BVEBO 6.0 Emitter Base Voltage IC 2.0 Collector Current PC 0.75 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION MIN BVCBO IC=10uA, IE=0 20 Collector -Base Voltage BVCEO IC=1mA, IB=0 16 Collector Emitter Voltage BVEBO IE=10uA, IC=0 6.0 Emitter Base Voltage ICBO VCB=16V, IE=0 Collector Cut off Current IEBO VEB=6V, IC=0 Emitter Cut off Current hFE * VCE=2V, IC=0.1A 100 DC Current Gain VCE=2V, IC=2A 75 VCE(Sat) IC=1A, IB=0.1A Collector Emitter Saturation Voltage Dynamic Characteristics ft VCE=2V, IC=10mA, Transition Frequency Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz hFE* Classification : A 100-240; B 200-400; C 350-500 UNIT V V V A W deg C TYP 80 20 MAX 2.0 0.2 500 0.3 - UN...