CSD1616 Datasheet PDF | Continental Device India

Continental Device India CSD1616

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CSD1616
Datasheet	CSD1616 Download
Manufacturer	Continental Device India
Description	NPN SILICON EPITAXIAL TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS

(Ta=25deg C)

DESCRIPTION

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current (DC) IC* Collector Current (Pulse) PC Collector Dissipation Tj, Tstg Operating And Storage Junction Temperature Range *PW=10ms, duty Cycle=50%

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL TEST CONDITION ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=6V, IC=0 Emitter Cut off Current hFE(1) * IC=100mA, VCE=2V DC Current Gain hFE(2) * IC=1A, VCE=2V VBE(on)* VCE=2V,IC=50mA Base Emitter On Voltage VCE(Sat)* IC=1A, IB=50mA Collector Emitter Saturation Voltage VBE(Sat)* IC=1A, IB=50mA Base Emitter Saturation Voltage Dynamic Characteristics ft VCE=2V,IC=100mA, Transition Frequency Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz SWITCHING TIMES ton VCC=10V,IC=100mA Turn on time tstg IB1=IB2=10mA, Storage time tf VBE(off)2=3V Fall time hFE(1) * CLASSIFICATION Y: 135-270 G: 200-400 VALUE 60...