CSD313
CSD313 is PNP / NPN PLASTIC POWER TRANSISTOR manufactured by Continental Device India.
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany
TO-220 Plastic Package
CSB507, CSD313
CSB507 CSD313
..
PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR
Low frequency Power Amplifier Applications
PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
1 2 3
DIM A B C D E F G H J K L M N O
M IN. 14.42 9.63 3.56
M A X.
1 2 3
16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7
ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 2A; IB = 0.2A D.C. current gain IC = 1A; VCE = 2V RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector)
All dim insions in m m .
VCBO VCEO IC Ptot Tj VCEsat h FE max. max. max. max. max. max. min max.
60 60 3.0 30 150
V V A W °C
1.0 V 40 320
VCBO VCEO VEBO max. max. max.
60 V 60 V 5.0 V
Continental Device India Limited
Data Sheet
Page 1 of 3
CSB507, CSD313
..
Collector current Collector current (Peak value) Total power dissipation up to TC = 25°C Junction temperature Storage temperature THERMAL CHARACTERISTICS From junction to case CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 20V IB = 0; VCE = 60V Emitter cut-off current IC = 0; VEB = 4V Breakdown voltages IC = 1 m A; IB = 0 IC = 1 m A; IE = 0 IE = 1 m A; IC = 0 Saturation voltage IC = 2 A; IB = 0.2 A Base emitter on voltage IC = 1A; VCE = 2V D.C. current gain IC = 0.1A; VCE = 2V IC = 1A; VCE = 2V-
- Transition frequency IC = 500 m A; VCE =...
