Datasheet4U Logo Datasheet4U.com

CSD880 - Audio Frequency Power Amplifier

Datasheet Summary

Description

SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 7.0 Emitter- Base Voltage IC 3.0 Collector Current IB 0.5 Base Current PC 1.5 Power Dissipation @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range

📥 Download Datasheet

Datasheet preview – CSD880

Datasheet Details

Part number CSD880
Manufacturer CDIL
File Size 185.50 KB
Description Audio Frequency Power Amplifier
Datasheet download datasheet CSD880 Datasheet
Additional preview pages of the CSD880 datasheet.

📁 Similar Datasheet

  • CSD880 - Power Transistors (RECTRON)
  • CSD88537ND - 60V Dual N-Channel Power MOSFET (Texas Instruments)
  • CSD88539ND - 60V Dual N-Channel Power MOSFET (Texas Instruments)
  • CSD83325L - 12-V Dual N-Channel Power MOSFET (Texas Instruments)
  • CSD85301Q2 - 20V Dual N-Channel Power MOSFET (Texas Instruments)
  • CSD85302L - 20V Dual N-Channel Power MOSFET (Texas Instruments)
  • CSD85312Q3E - 20V Dual N-Channel Power MOSFET (Texas Instruments)
  • CSD86311W1723 - Dual N-Channel Power MOSFET (Texas Instruments)
  • CSD86330Q3D - Synchronous Buck Power Block (Texas Instruments)
  • CSD86350Q5D - Synchronous Buck Power Block (Texas Instruments)
Other Datasheets by CDIL
  • CSD882 - Audio Frequency Power Amplifier
  • CSD863 - EPITAXIAL PLANAR SILICON TRANSISTORS
  • CSD1047 - TO-3P Fully Isolated Plastic Package Transistor
  • CSD1047F - TO-3P Fully Isolated Plastic Package Transistor
  • CSD1133 - (CSD1133 / CSD1134) PNP / NPN PLASTIC POWER TRANSISTORS
  • CSD1134 - (CSD1133 / CSD1134) PNP / NPN PLASTIC POWER TRANSISTORS
  • CSD1833 - NPN SILICON EPITAXIAL POWER TRANSISTOR
  • CSD313 - PNP / NPN PLASTIC POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON POWER TRANSISTOR CSD880 TO-220 Audio Frequency Power Amplifier Applications. Complementary CSB834 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 7.0 Emitter- Base Voltage IC 3.0 Collector Current IB 0.5 Base Current PC 1.5 Power Dissipation @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=7V, IC=0 Emitter Cut off Current VCEO IC=50mA, IB=0 60 Collector Emitter Voltage hFE IC=0.
Published: |