CTN369 Datasheet PDF | Continental Device India

Continental Device India CTN369

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	CTN369
Datasheet	CTN369 Download
Manufacturer	Continental Device India
Description	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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ABSOLUTE MAXIMUM RATINGS

(Ta=25º C unless specified otherwise )

DESCRIPTION

SYMBOL VCES Collector -Emitter Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current Continuous PD Total Power Dissipation @TA=25ºC Derate Above =25ºC PD Total Power Dissipation @TC=25ºC Derate Above =25ºC Tj, Tstg Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Juction to Ambient Rth(j-c) Rth(j-a) 45 156 ºC/W ºC/W VALUE 25 20 5 1 1.0 6.4 2.75 22 -55 to +150 UNIT V V V A W mW/ºC W mW/ºC ºC

ELECTRICAL CHARACTERISTICS

(Ta=25º C unless specified otherwise )

DESCRIPTION

SYMBOL TEST CONDITION VCEO IC=10mA, IB=0 Collector Emitter Breakdown Voltage VCBO IC=100µA, IE=0 Collector Base Breakdown Voltage VEBO IE=100µA, IC=0 Emitter Base Breakdown Voltage ICBO VCB=25V, IE=0 Collector Cut off Current IE=0, VCB=25V, Tj=150ºC IEBO VEB=5V, IC=0 Emitter Cut off Current VBE(on) IC=1A, VCE=1V Base Emitter on Voltage VCE(sat) IC=1A,IB=100mA Collector Emitter Satu...