Continental Device India CTN635
Complementary Transistors
| Part No. | CTN635 |
|---|---|
| Datasheet | CTN635 Download |
| Manufacturer |  Continental Device India |
| Description | Complementary Transistors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Peak Base Current – Continuous Peak Power Dissipation @ Ta=25ºC Derate above 25°C Power Dissipation @ Tc=25ºC Derate above 25°C Operating And Storage Junction Temperature Range Symbol C T N 6 3 5 C T N 6 3 7 C T N 6 3 9 CTN636 CTN638 CTN640 VCBO VCEO VEBO IC ICM IB IBM PD PD Tj ,Tstg 45 45 60 60 5 1 1.5 100 200 750 6 2.5 20 –55 to +150 100 80 - Units V V V A A mA mA mW mW/°C W mW/°C ºC Continental Device India Limited Data Sheet Page 1 of 4 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640ELECTRICAL CHARACTERISTICS
(Ta =25ºC unless otherwise specified) Characteristic Collector-Emitter Voltage IC=10mA, IB =0 Collector-Base Voltage IC=100µA, I E=0 Emitter-Base Voltage IE=10µA, IC=0 Collector Cutoff Current VCB =30V, IE =0 VCB =30V, IE =0, Ta=125°C Base Emitter On Voltage IC=500mA, V CE=2V Collector-Emitter (Sat) Voltage IC=500mA, IB =50mA D.C. Current Gain IC...
