CTZ5.6 Datasheet PDF - CDIL HIGH SPEED SILICON SWITCHING DIODE Specs

CTZ5.6 - HIGH SPEED SILICON SWITCHING DIODE

This page provides the datasheet information for the CTZ5.6, a member of the CTZ56 HIGH SPEED SILICON SWITCHING DIODE family.

Datasheet Summary

Description

SYMBOL VALUE Power Dissipation @TA=25ºC PTA 500 PS Surge Power Dissipation 5 tp=8.3mS TJ Junction Temperature 175 Tstg Storage Temperature -65 to+175 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Rth(j-a) Thermal Resistance Junction Ambient Forward Voltage at IF=

Features

These Zeners Are Best Suited For Industrial Purpose , Military & Space.

Datasheet Details

Part number	CTZ5.6
Manufacturer	CDIL
File Size	245.09 KB
Description	HIGH SPEED SILICON SWITCHING DIODE
Datasheet	CTZ5.6 Datasheet
Additional preview pages of the CTZ5.6 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD CTZ 2.6 to 47 500mW DO- 35 Glass Axial Package FEATURES These Zeners Are Best Suited For Industrial Purpose , Military & Space applications. Hermetically Sealed Glass With Double Stud And Glass Passivated Chip Provides Excellent Stabililty and Reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE Power Dissipation @TA=25ºC PTA 500 PS Surge Power Dissipation 5 tp=8.

Published: Nov 7, 2007 |