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CTZ6.8 - (CTZxx) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD

This page provides the datasheet information for the CTZ6.8, a member of the CTZ56 (CTZxx) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD family.

Datasheet Summary

Description

SYMBOL VALUE Power Dissipation @TA=25ºC PTA 500 PS Surge Power Dissipation 5 tp=8.3mS TJ Junction Temperature 175 Tstg Storage Temperature -65 to+175 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Rth(j-a) Thermal Resistance Junction Ambient Forward Voltage at IF=

Features

  • These Zeners Are Best Suited For Industrial Purpose , Military & Space.

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Datasheet preview – CTZ6.8

Datasheet Details

Part number CTZ6.8
Manufacturer CDIL
File Size 245.09 KB
Description (CTZxx) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
Datasheet download datasheet CTZ6.8 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD CTZ 2.6 to 47 500mW DO- 35 Glass Axial Package FEATURES These Zeners Are Best Suited For Industrial Purpose , Military & Space applications. Hermetically Sealed Glass With Double Stud And Glass Passivated Chip Provides Excellent Stabililty and Reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE Power Dissipation @TA=25ºC PTA 500 PS Surge Power Dissipation 5 tp=8.
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