• Part: LL4448
  • Description: HIGH SPEED SILICON SWITCHING DIODES
  • Category: Diode
  • Manufacturer: Continental Device India
  • Size: 129.24 KB
Download LL4448 Datasheet PDF
Continental Device India
LL4448
DESCRIPTION Peak Repetitive Reverse Voltage SYMBOL VRRM Reverse Voltage (Continuous) Average Rectified Forward Current IF (av) Forward Current (DC) Repetitive Peak Forward Current Non Repetitive Peak Surge Current t=1 µs t=1 s Power Dissipation up to Tamb=25 ºC IFRM IFSM IFSM Ptot Derating factor Operating and Storage Junction Temperature Range Tj, Tstg VALUE 100 75 150 200 450 2000 500 500 2.85 - 65 to +200 ELECTRICAL CHARACTERISTICS (Ta=25 ºC Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Forward Voltage Reverse Current VF IF=10m A IF=5m A IF=100m A IR VR=20V VR=75V LL4148 LL4448 LL4448 Reverse Breakdown Voltage VR=20V, Tj=100º C, LL4448 VR=20V, Tj=150º C VBR IR=100µA DYNAMIC CHARACTERISTICS Diode Capacitance Forward Recovery Voltage Reverse Recovery Time Cd VR=0V, f=1MHz Vfr IF=50m A, tr=20ns trr IF=10m A to IR=60m A, RL=100 Ω, Measured at IR=1m A UNIT V V m A m A m A m A m A m W m W/K ºC MIN MAX UNIT 0.62 0.72 1.0 25 5.0 V V n A...