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MJE15033 - SILICON EPITAXIAL POWER TRANSISTORS

Download the MJE15033 datasheet PDF. This datasheet also covers the MJE15032 variant, as both devices belong to the same silicon epitaxial power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL VALUE Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak Base Current Power Dissipation TC=25ºC Derate Above 25ºC Power Dissipation TA=25ºC Derate Above 25ºC Operating & Storage Junction Temperature Range VCBO VCEO VEBO IC IB PD PD T

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJE15032-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJE15033
Manufacturer CDIL
File Size 82.42 KB
Description SILICON EPITAXIAL POWER TRANSISTORS
Datasheet download datasheet MJE15033 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPN MJE15033 PNP TO - 220 Plastic Package High - Frequency Drivers in Audio Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak Base Current Power Dissipation TC=25ºC Derate Above 25ºC Power Dissipation TA=25ºC Derate Above 25ºC Operating & Storage Junction Temperature Range VCBO VCEO VEBO IC IB PD PD Tj, Tstg 250 250 5 8 16 2 50 0.4 2 0.016 - 65 to +150 Thermal Resistance Thermal Ambient Junction to Case Rth (j-a) Rth (j-c) 62.5 2.