Datasheet Details
| Part number | MPS2907 |
|---|---|
| Manufacturer | CDIL |
| File Size | 71.40 KB |
| Description | PNP Silicon Planar Epitaxial Transistors |
| Datasheet | MPS2907 MPS2907A Datasheet (PDF) |
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Overview: Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MPS2907 |
|---|---|
| Manufacturer | CDIL |
| File Size | 71.40 KB |
| Description | PNP Silicon Planar Epitaxial Transistors |
| Datasheet | MPS2907 MPS2907A Datasheet (PDF) |
|
|
|
SYMBOL MPS2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Tstg 40 60 5 600 625 5 1.5 12 -55 to +150 MPS2907A 60 75 UNITS V V V mA mW mW/ºC W mW/ºC ºC Rth(j-a) Rth(j-c) 200 83.3 ºC/W ºC/W Continental Device India Limited Data Sheet Page 1 of 5 PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS2907 MPS2907A TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter-Base Voltage Collector-Cut off Current BVCEO * BVCBO BVEBO ICBO VCB=50V, IE = 0 VCB=50V, IE = 0, Collector-Cut off Current Collector-Cut off Current Emitter Cut off Current Base Cut off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain hFE VCE=10V,IC=0.1mA VCE=10V,IC=1mA VCE=10V,IC=10mA VCE=10V*,IC=150mA VCE=10V*,IC=500mA ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DYNAMIC CHARACTERISTICS SYMBOL TEST CONDITION ICEX ICEO IEBO IBEX VCE(sat)* VBE(sat)* TA = 150 C VCE=30V, VEB(off)=0.5V VCE=10V VEB=3V, IC = 0 VCE=30V,VEB(off)=0.5V IC=150mA,IB=15mA IC=500mA,IB=50mA IC=150mA,IB=15mA IC=500mA,IB=50mA 0 IC=10mA,IB=0 IC=10µA,IE=0 IE=10µA, IC=0 MPS2907 MIN MAX 40 60 5 20 20 50 10 10 50 0.4 1.6 1.3 2.6 35 50 75 100 30 300 MPS2907A MIN MAX 60 60 5 10 10 50 10 10 50 0.4 1.6 1.3 2.6 75 100 100 100 50 300 UNITS V V V nA µA nA nA nA nA V V V V µA MPS2907 MIN MAX MPS290
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MPS2907 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung |
 |
MPS2907 | General Purpose Transistors | Motorola |
 |
MPS2907 | PNP General Purpose Transistors | Weitron Technology |
 |
MPS2907 | PNP Silicon Plastic-Encapsulate Transistor | MCC |
 |
MPS2907 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS | TRANSYS |
| Part Number | Description |
|---|---|
| MPS2907A | PNP Silicon Planar Epitaxial Transistors |
| MPS2222 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| MPS2222A | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| MPS5172 | NPN SILICON PLANAR AMPLIFIER TRANSISTOR |
| MPS650 | NPN SILICON PLANAR AMPLIFIER TRANSISTORS |
| MPS651 | NPN SILICON PLANAR AMPLIFIER TRANSISTORS |
| MPS6530 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| MPS6531 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| MPS750 | PNP SILICON PLANAR AMPLIFIER TRANSISTORS |
| MPS751 | PNP SILICON PLANAR AMPLIFIER TRANSISTORS |