Continental Device India MPS651
NPN SILICON PLANAR AMPLIFIER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
.DESCRIPTION
Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @Ta=25 degC Derate Above 25deg C Power Dissipation @Tc=25 degC Derate Above 25deg C Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg MPS650 MPS651 MPS750 MPS751 40 60 60 80 5.0 2.0 625 5.0 1.5 12.0 -55 to +150 THERMAL RESISTANCE Junction to Case Rth(j-c) 83.3 Junction to Ambient Rth(j-a) 200ELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION MPS650 MPS651 MPS750 MPS751 Collector -Emitter Voltage VCEO* IC=10mA,IB=0 >40 >60 Collector -Base Voltage VCBO IC=100uA, IE=0 >60 >80 Emitter -Base Voltage VEBO IE=10uA,