Datasheet Details
| Part number | MPSA29 |
|---|---|
| Manufacturer | CDIL |
| File Size | 115.71 KB |
| Description | NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
| Datasheet | MPSA29 MPSA28 Datasheet (PDF) |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package EBC ABSOLUTE MAXIMUM.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MPSA29 |
|---|---|
| Manufacturer | CDIL |
| File Size | 115.71 KB |
| Description | NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
| Datasheet | MPSA29 MPSA28 Datasheet (PDF) |
|
|
|
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCES VCBO VEBO IC PD PD Tj, Tstg MPSA28 80 80 12 500 625 5.0 1.5 12 - 55 to +150 MPSA29 100 100 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 200 83.3 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCES IC=100µA, VBE=0 MPSA28 MPSA29 Collector Base Voltage VCBO IC=100µA, IE=0 MPSA28 MPSA29 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut Off Current ICBO VCB=60V, IE=0, VCB=80V, IE=0, MPSA28 MPSA29 Collector Cut Off Current ICES VCE=60V, VBE=0, MPSA28 VCE=80V, VBE=0, MPSA29 Emitter Cut Off Current IEBO VEB=10V, IC = 0 DC Current Gain *hFE VCE=5V, IC=10mA VCE=5V, IC=100mA Collector Emitter Saturation Voltage *VCE (sat) IC=10mA, IB=0.01mA IC=100mA, IB=0.1mA Base Emitter On Voltage *VBE (on) VCE=5V, IC=100mA Current Gain Bandwidth Product **fT IC=10mA, VCE=5V, f=100MHz Output Capacitance Cob VCB=10V, IE=0V, f=1.0 MHz MIN 80 100 80 100 12 10,000 10,000 125 MAX 100 100 500 500 100 1.2 1.5 2.0 8.0 *Pulse test: Pulse Width <300µs, Duty Cycle<2% **fT = IhfeI* ftest MPSA28_29Rev270607E Continental Device India Limited Data Sheet UNITS V V V mA mW mW/ºC W mW/ºC ºC ºC/W ºC/W UNITS V V V V V nA nA nA nA nA V V V MHz pF Page 1 of 4 L Dimension With 'L' Uncontrolled B 1 2 3 D AA G FF KA E MPSA28 / MPSA29 TO-92 Plastic Package TO-92 Plastic Package DIM MIN.
MAX.
A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.55 F 5 DEG
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MPSA29 | NPN Transistor | JCET |
 |
MPSA29 | NPN Darlington Transistor | Fairchild Semiconductor |
 |
MPSA29 | (MPSA28 / MPSA29) Darlington Transistor | Motorola |
 |
MPSA29 | (MPSA28 / MPSA29) Darlington Transistors | ON Semiconductor |
 |
MPSA29 | SILICON NPN DARLINGTON TRANSISTORS | Central Semiconductor |
| Part Number | Description |
|---|---|
| MPSA28 | NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS |
| MPSA05 | NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| MPSA06 | NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| MPSA13 | NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS |
| MPSA14 | NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS |
| MPSA42 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| MPSA43 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| MPSA44 | NPN TRANSISTORS |
| MPSA45 | NPN TRANSISTORS |
| MPSA55 | NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS |