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MPSA29 - NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS

Download the MPSA29 datasheet PDF. This datasheet also covers the MPSA28 variant, as both devices belong to the same npn silicon planar epitaxial darlington transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCES VCBO VEBO IC PD PD Tj, Tstg MPSA28 80 80 12

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MPSA28-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MPSA29
Manufacturer CDIL
File Size 115.71 KB
Description NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
Datasheet download datasheet MPSA29 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS MPSA28 / MPSA29 TO-92 Plastic Package EBC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCES VCBO VEBO IC PD PD Tj, Tstg MPSA28 80 80 12 500 625 5.0 1.5 12 - 55 to +150 MPSA29 100 100 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 200 83.