Continental Device India MPSA42
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg C unless otherwise specified)DESCRIPTION
SYMBOL MPSA42 MPSA43 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @ Ta=25 degC Derate above 25 deg C Power Dissipation @ Tc=25 degC Derate above 25 deg C Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 300 200 300 200 6 500 625 5 1.5 12 -55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient Rth(j-c) Rth(j-a) 83.3 200ELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION MPSA42 Collector -Emitter Voltage VCEO IC=1mA,IB=0 >300 Collector -Base Voltage VCBO IC=100uA.IE=0 >300 Emitter-Base Voltage VEBO IE=100uA, IC=0 >6.0 Collector-Cut