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MPSA42 - NPN EPITAXIAL PLANAR SILICON TRANSISTORS

General Description

SYMBOL MPSA42 MPSA43 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @ Ta=25 degC Derate above 25 deg C Power Dissipation @ Tc=25 degC Derate above 25 deg C Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC

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Datasheet Details

Part number MPSA42
Manufacturer CDIL
File Size 90.42 KB
Description NPN EPITAXIAL PLANAR SILICON TRANSISTORS
Datasheet download datasheet MPSA42 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42 MPSA 43 TO-92 CBE EBC High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL MPSA42 MPSA43 Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation @ Ta=25 degC Derate above 25 deg C Power Dissipation @ Tc=25 degC Derate above 25 deg C Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 300 200 300 200 6 500 625 5 1.5 12 -55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient Rth(j-c) Rth(j-a) 83.