Continental Device India MPSA55
NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C unless otherwise specified)DESCRIPTION
SYMBOL MPSA05 MPSA55 MPSA06 MPSA56 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation@Ta=25°C Derate Above 25°C Total Device Dissipation@ Tc=25°C Derate Above 25°C Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 60 60 4 500 625 5.0 1.5 12 -55 to +150 80 80 THERMAL RESISTANCE Junction to ambient Rth(j-a) (1) 200 Junction to case Rth(j-c) 83.3 (1) Rth(j-a) is measured with the device soldered into a typical printed circuit board. UNITS V V V mA mW mW/°C W mW/°C °C °C/mW °C/mW Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL TRANSIST