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MPSL51 Datasheet PNP SILICON PLANAR EPITAXIAL TRANSISTOR

Manufacturer: CDIL

Datasheet Details

Part number MPSL51
Manufacturer CDIL
File Size 99.74 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTOR
Download MPSL51 Download (PDF)

General Description

SYMBOL VALUE Collector -Base Voltage VCBO 100 Collector -Emitter Voltage VCEO 100 Emitter -Base Voltage VEBO 4.0 Collector Current Continuous IC 600 Power Dissipation @Ta=25 degC PD 625 Derate Above 25 deg C 5.0 Power Dissipation @Tc=25 degC PD 1.5 Derate Above 25 deg C 12 Operating And Storage Junction Tj, Tstg -55 to +150 Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 83.3 Junction to Ambient Rth(j-a) 200 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN Collector -Emitter Voltage VCEO* IC=1mA,IB=0 100 Collector -Base Voltage VCBO IC=100uA.IE=0 100 Emitter -Base Voltage VEBO IE=10uA, IC=-0 4.0 Collector-Cut off Current ICBO VCB=50V, IE=0 - Emitter-

Overview

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR MPSL51 TO-92 CBE EBC Amplifier Transistor.

ABSOLUTE MAXIMUM RATINGS.