RB521S-40 - SILICON EXPITAXIAL SCHOTTKY BARRIER DIODE

Description

SYMBOL Repetitive Peak Reverse Voltage VRRM Continuous Reverse Voltage Mean Rectifying Current VR IO Peak Forward Surge Current ( 60 Hz or Cyc.) tpIF=SM1ms Junction Temperature Tj Operating and Storage Junction Temperature Tstg VALUE 45 40 200 1 150 - 55 to +150 ELECTRICAL CHARACTERISTI

Features

Ultra Small Mold Type, Low Forward Voltage, High Reliability.

CDIL

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Datasheet Details

Part number	RB521S-40
Manufacturer	CDIL
File Size	121.67 KB
Description	SILICON EXPITAXIAL SCHOTTKY BARRIER DIODE
Datasheet	RB521S-40 Datasheet

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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EXPITAXIAL SCHOTTKY BARRIER DIODE RB521S-40 SOD-523 PLASTIC PACKAGE Marking code = Z with cathode band Features Ultra Small Mold Type, Low Forward Voltage, High Reliability MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Repetitive Peak Reverse Voltage VRRM Continuous Reverse Voltage Mean Rectifying Current VR IO Peak Forward Surge Current ( 60 Hz or Cyc.

Published: May 3, 2016 |