Continental Device India TIP122F
NPN/PNP SILICON POWER DARLINGTON TRANSISTORS
APPLICATIONS
.ABSOLUTE MAXIMUM RATINGS
(Ta=25deg C)DESCRIPTION
SYMBOL Collector -Base Voltage VCBO Collector -Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current -Continuous IC Collector Current (Peak) ICM Base Current IB Total Power Dissipation @ Tc=25 deg C PD Derate Above 25 deg C Total Power Dissipation @ Ta=25 deg C PD Derate Above 25 deg C Unclamped Inductive Load Energy (1) E Junction Temperature Tj Storage Temperature Range Tstg THERMAL RESISTANCE From Junction to Ambient Rth(j-a) From Junction to Case Rth(j-c) (1) IC=1A, L=100mH,P.R.F.=10Hz, VCC=20V, RBE=100 ohmsELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Specified)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter (sus) Voltage VCEO (