2SC5007 - NPN SILICON EPITAXIAL TRANSISTOR

CEL

General Description

amplifiers from VHF band to UHF band.

Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

Key Features

Low Voltage Use.
High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz).
Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz).
Ultra Super Mini Mold Package.

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2SC5007 npn silicon epitaxial transistor by CEL - Datasheet Preview

Datasheet Details

Part number	2SC5007
Manufacturer	CEL
File Size	1.81 MB
Description	NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	2SC5007 Datasheet

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DATA SHEET SILICON TRANSISTOR NE68119 / 2SC5007 JEITA Part No. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 1.6±0.1-OUT 1.0 0.5 0.5 0.2–+00.1 DESCRIPTION The NE68119 / 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is a proprietary fabrication technique. +0.1 –0 0.3 +0.1 –0.05 FEATURES • Low Voltage Use. • High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.4 dB TYP.