2SC5754 - NPN SILICON RF TRANSISTOR

CEL

Key Features

Ideal for 460 MHz to 2.4 GHz medium output power amplification.
PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm.
High collector efficiency: ηC = 60%.
UHS0-HV technology (fT = 25 GHz) adopted.
High reliability through use of gold electrodes.
Flat-lead 4-pin thin-type super minimold (M04) package.

2SC5754 npn silicon rf transistor by CEL - Datasheet Preview

Datasheet Details

Part number	2SC5754
Manufacturer	CEL
File Size	2.07 MB
Description	NPN SILICON RF TRANSISTOR
Datasheet	2SC5754 Datasheet

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Full PDF Text Transcription (Reference)

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PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.