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CA3509M4 - L TO S BAND LOW NOISE AMPLIFIER IC

Datasheet Summary

Description

Low Noise and High Gain On chip Bias supply circuit On chip ESD protection diode Applications： Low Noise Amplifier IC for Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou and Galileo Low Noise Amplifier IC for Satellite Radio (SDARS, DMB, etc.) Ant

Features

  • Low noise figure and high associated gain NF=0.4dB Typ. , Ga=17.0dB Typ. @Vdd=3.0V, Idd=15mA, f=1.575GHz.

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Datasheet Details

Part number CA3509M4
Manufacturer CEL
File Size 440.96 KB
Description L TO S BAND LOW NOISE AMPLIFIER IC
Datasheet download datasheet CA3509M4 Datasheet
Additional preview pages of the CA3509M4 datasheet.

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    DATA SHEET: CA3509M4 L TO S BAND LOW NOISE AMPLIFIER IC Features： ⚫ Low noise figure and high associated gain NF=0.4dB Typ., Ga=17.0dB Typ. @Vdd=3.0V, Idd=15mA, f=1.575GHz Description： ⚫ Low Noise and High Gain ⚫ On chip Bias supply circuit ⚫ On chip ESD protection diode Applications： ⚫ Low Noise Amplifier IC for Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou and Galileo ⚫ Low Noise Amplifier IC for Satellite Radio (SDARS, DMB, etc.) Antenna ⚫ Low Noise Amplifier for Microwave Communication Package： ⚫ Flat-lead 4-pin thin-type super minimold package PIN Configuration： C0U PIN No.
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