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CE3512K2 - 12GHz Super Low Noise FET

General Description

Super Low Noise and High Gain Hollow (Air Cavity) Plastic package

Key Features

  • Super Low noise figure and high associated gain: NF = 0.30 dB TYP. , Ga = 13.7 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz.

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Datasheet Details

Part number CE3512K2
Manufacturer CEL
File Size 426.11 KB
Description 12GHz Super Low Noise FET
Datasheet download datasheet CE3512K2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION  Super Low Noise and High Gain  Hollow (Air Cavity) Plastic package FEATURES  Super Low noise figure and high associated gain: NF = 0.30 dB TYP., Ga = 13.7 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz PACKAGE  Micro-X plastic package APPLICATIONS  KU Band LNB (Low Noise Block) Suitable for 1st Stage ORDERING INFORMATION Part Number CE3512K2 Order Number CE3512K2-C1 Package Micro-X plastic package Marking C5 Description • Embossed tape 8 mm wide • Pin 4 (Gate) faces the perforation side of the tape • MOQ 10 kpcs/reel This document is subject to change without notice. Date Published: Nov 2018 CDS-0018-05 (Issue B) 1 PIN CONFIGURATION AND INTERNAL BLOCK DIAGRAM Pin No.