CE3514M4 - 12GHz Low Noise FET

CEL

General Description

Low Noise and High Gain Original Dual Mold Plastic package

Key Features

Low noise figure and high associated gain NF=0.42dB TYP. , Ga=12.2dB TYP. @VDS=2V, ID=10mA, f=12GHz.

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CE3514M4 12ghz low noise fet by CEL - Datasheet Preview

Datasheet Details

Part number	CE3514M4
Manufacturer	CEL
File Size	720.77 KB
Description	12GHz Low Noise FET
Datasheet	CE3514M4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF Low Noise FET CE3514M4 12GHz LoEwnteNroaiSsheoFrtEDTociunmDeunta/TlitMleoNladmPelHaesrteic PKG DESCRIPTION  Low Noise and High Gain  Original Dual Mold Plastic package FEATURES  Low noise figure and high associated gain NF=0.42dB TYP., Ga=12.2dB TYP. @VDS=2V, ID=10mA, f=12GHz PACKAGE  Flat-lead 4-pin thin-type super minimold package APPLICATIONS  DBS LNB gain-stage, Mix-stage  Low noise amplifier for microwave communication systems ORDERING INFORMATION Part Number Order Number CE3514M4 CE3514M4-C2 Package Flat-lead 4-pin thin-type super minimold package Marking C0F Description • Embossed tape 8 mm wide • Pin 1(Source), Pin 2 (Drain) Face the perforation side of the Tape • MOQ 15 kpcs/reel This document is subject to change without notice.