CEL NE02135
The NE021 series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability.| Part No. | NE02135 |
|---|---|
| Datasheet | NE02135 Download |
| Manufacturer |  CEL |
| Description | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● HIGH INSERTION GAIN: 18.5 dB at 500 MHz● LOW NOISE FIGURE: 1.5 dB at 500 MHz
● HIGH POWER GAIN: 12 dB at 2 GHz
● LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression B E NE021 SERIES
DESCRIPTION
NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. NE02107 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications. 00 (CHIP) 07/07B 33 (SOT 23 STYLE) 35 (MICRO-X) NE02135 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG ANG Rn/50 VCE = 10 V, IC = 5 mA 500 1000 1500 2000 2500 3000 3500 500 1000 1500 2000 2500 3000 3500 1.2 1.5 2.0 2.4 2.6 3.6 3.7 1.8 1.9 2.4 2.9 3.2 3.9 4.3 18.60 13.82 11.83 9.36 7.82 7.51 6.31 21.32 16.15 13.50 11.02 9.12 8.10 6.48 .36 .31 .50 .44 .52 .68 .71 .16 .33 .46 .53 .57 .62 .67 69 124 165 -175 -1...
