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NE321000 - ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

General Description

NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility.

Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications.

Key Features

  • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE &.

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Datasheet Details

Part number NE321000
Manufacturer CEL
File Size 161.99 KB
Description ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Datasheet download datasheet NE321000 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11 • GATE LENGTH: ≤0.2 µm • GATE WIDTH: 160 µm DESCRIPTION NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.