Datasheet Summary
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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Features
- SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz
Noise Figure, NF (dB)
NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT
VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11
- GATE LENGTH: ≤0.2 µm
- GATE WIDTH: 160 µm
DESCRIPTION
NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for mercial, industrial and space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and...
