Datasheet Details
| Part number | NE321000 |
|---|---|
| Manufacturer | CEL |
| File Size | 161.99 KB |
| Description | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| Datasheet |
 NE321000 Datasheet
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| Part number | NE321000 |
|---|---|
| Manufacturer | CEL |
| File Size | 161.99 KB |
| Description | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| Datasheet |
NE321000 Datasheet
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NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility.
Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications.