NE321000 Overview
NEC's NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for mercial, industrial and space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
NE321000 Key Features
- SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz
- GATE LENGTH: ≤0.2 µm
- GATE WIDTH: 160 µm
