NE3510M04 Description
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET.
NE3510M04 Key Features
- Flat-lead 4-pin thin-type super minimold (M04) package
NE3510M04 is HETERO JUNCTION FIELD EFFECT TRANSISTOR manufactured by CEL.
| Part Number | Description |
|---|---|
| NE3511S02 | X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3512S02 | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE3514S02 | K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE350184C | HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3509M04 | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET.