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NE3510M04 Datasheet Hetero Junction Field Effect Transistor

Manufacturer: CEL

Overview: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL.

Datasheet Details

Part number NE3510M04
Manufacturer CEL
File Size 204.40 KB
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR
Datasheet NE3510M04_CEL.pdf

Key Features

  • Low noise figure and high associated gain NF = 0.45 dB TYP. , Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP. , Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only).
  • Flat-lead 4-pin thin-type super minimold (M04) package.

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