NE3510M04 Datasheet | CEL

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Features - Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only) - Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS - Satellite radio (SDARS, DMB, etc.) antenna LNA - Low noise amplifier for microwave munication system ORDERING INFORMATION Part Number NE3510M0 4 NE3510M04-T2 Order Number N E 35 10 M0 4- A NE3510M04-T2-A Package Flat-lead 4-pin thintype super minimold (M04) (Pb-Free) Quantity 50 p cs ( N on r eel...