Part NE3510M04
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR
Category Transistor
Manufacturer CEL
Size 204.40 KB
CEL
NE3510M04

Overview

  • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only)
  • Flat-lead 4-pin thin-type super minimold (M04) package