CEL NE3512S02
HETERO JUNCTION FIELD EFFECT TRANSISTOR
| Part No. | NE3512S02 |
|---|---|
| Datasheet | NE3512S02 Download |
| Manufacturer |  CEL |
| Description | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz● Micro-X plastic (S02) package
APPLICATIONS
● C to Ku-band DBS LNB● Other C to Ku-band communication systems ORDERING INFORMATION Part Number NE3512S02-T1C NE3512S02-T1D Order Number NE3512S02-T1C-A NE3512S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking C Supplying Form
● 8 mm wide embossed taping
● Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3512S02
ABSOLUTE MAXIMUM RATINGS
(TA = +25°C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Note Ratings 4 −3 IDSS 100 165 +125 −65 to +125 Unit V V mA µA mW °C °C Tch Tstg Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
