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NE5511279A - 7.5V OPERATION SILICON RF POWER LD-MOS FET

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CEL

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NE5511279A 7.5V OPERATION SILICON RF POWER LD-MOS FET by CEL - Datasheet Preview — Datasheet preview – NE5511279A

Datasheet Details

Part number	NE5511279A
Manufacturer	CEL
File Size	797.72 KB
Description	7.5V OPERATION SILICON RF POWER LD-MOS FET
Datasheet	NE5511279A Datasheet
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NE5511279A Product details

Description

transmission power amplifier for 7.5 V Radio Systems.

Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package.

Features

High output power.
High power added efficiency.
High linear gain.
Surface mount package.
Single supply : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) : add = 48% TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : add = 50% TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) : GL = 15.0 dB TYP. (f = 900 MHz, VDS =.

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Published: Aug 25, 2020 |