NE664M04-A - NPN SILICON RF TRANSISTOR

CEL

Download the NE664M04-A datasheet PDF. This datasheet also covers the NE664M04 variant, as both devices belong to the same npn silicon rf transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Ideal for 460 MHz to 2.4 GHz medium output power amplification.
PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm.
High collector efficiency: ηC = 60%.
UHS0-HV technology (fT = 25 GHz) adopted.
High reliability through use of gold electrodes.
Flat-lead 4-pin thin-type super minimold (M04) package.

📥 Download Datasheet

NE664M04-A npn silicon rf transistor by CEL - Datasheet Preview — Note: The manufacturer provides a single datasheet file (NE664M04_CaliforniaEasternLabs.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	NE664M04-A
Manufacturer	CEL
File Size	2.07 MB
Description	NPN SILICON RF TRANSISTOR
Datasheet	NE664M04-A Datasheet

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Other Datasheets by CEL

Part Number	Description
NE664M04-T2-A	NPN SILICON RF TRANSISTOR
NE662M04	NPN SILICON HIGH FREQUENCY TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.