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NE678M04 - NPN SILICON RF TRANSISTOR

Features

  • Ideal for medium output power amplification.
  • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm.
  • HFT3 technology (fT = 12 GHz) adopted.
  • High reliability through use of gold electrodes.
  • Flat-lead 4-pin thin-type super minimold package.

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Datasheet preview – NE678M04

Datasheet Details

Part number NE678M04
Manufacturer CEL
File Size 438.99 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet NE678M04 Datasheet
Additional preview pages of the NE678M04 datasheet.

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Full PDF Text Transcription

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NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number NE678M04-A 2SC5753-A NE678M04-T2-A 2SC5753-T2-A Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs.
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