• Part: NE678M04
  • Description: NPN SILICON RF TRANSISTOR
  • Category: Transistor
  • Manufacturer: CEL
  • Size: 438.99 KB
Download NE678M04 Datasheet PDF
CEL
NE678M04
FEATURES - Ideal for medium output power amplification - PO (1 d B) = 18.0 d Bm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 d Bm - HFT3 technology (f T = 12 GHz) adopted - High reliability through use of gold electrodes - Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number NE678M04-A 2SC5753-A NE678M04-T2-A 2SC5753-T2-A Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form - 8 mm wide embossed taping - Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Tj Tstg Ratings 9.0 6.0 2.0 100 205 150 - 65 to +150 Note Mounted on 1.08 cm2  1.0 mm (t) glass epoxy PCB Unit V V V m A m W C...