NE68019 Datasheet | CEL

NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR Features - HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz - LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz - HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz - EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low...