Datasheet Details
| Part number | NE68133 |
|---|---|
| Manufacturer | CEL |
| File Size | 1.70 MB |
| Description | SILICON TRANSISTOR |
| Datasheet | NE68133-CEL.pdf |
|
|
Overview: DDAATTAA SSHHEEEETT SILICON TRANSISTOR NE68133 / 2SC3583 JEITA Part No. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR +0.1UT −0.05 1.1PHASEto1.4 0.
| Part number | NE68133 |
|---|---|
| Manufacturer | CEL |
| File Size | 1.70 MB |
| Description | SILICON TRANSISTOR |
| Datasheet | NE68133-CEL.pdf |
|
|
|
The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.
Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.
| Part Number | Description |
|---|---|
| NE68130 | NPN SILICON RF TRANSISTOR |
| NE68139 | SILICON TRANSISTOR |
| NE68119 | NPN SILICON EPITAXIAL TRANSISTOR |
| NE681M03 | NPN SILICON TRANSISTOR |
| NE681M13 | NPN SILICON TRANSISTOR |
| NE680 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68000 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68018 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68019 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68030 | NPN SILICON HIGH FREQUENCY TRANSISTOR |