Datasheet Summary
DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
/
2SC3583
JEITA Part No.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
+0.1UT
- 0.05
1.1PHASEto1.4 0.3
DESCRIPTION The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to
UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique.
Features
- NF
- Ga
1.2 dB TYP. 13 dB TYP.
@f = 1.0 GHz @f = 1.0 GHz
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2...