NE68518 Description
DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) NE68518 / 2SC5015 NPN SILICON RF TRANSISTOR.
NE68518 Key Features
- High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
- Low voltage operation
- Low noise and high gain
- 4-pin super minimold (18) package
- 8 mm wide embossed taping
- Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape