NE68630
FEATURES
- HIGH GAIN BANDWIDTH PRODUCT: f T of 15 GHz
- LOW VOLTAGE/LOW CURRENT OPERATION
- HIGH INSERTION POWER GAIN:
|S21E|2 = 12 d B @ 2 V, 7 m A, 2 GHz |S21E|2 = 11 d B @ 1 V, 5 m A, 2 GHz
- LOW NOISE: 1.5 d B AT 2.0 GHz
- AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES
DESCRIPTION
The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator applications. NE686's high f T make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is available in six different low cost plastic surface mount package styles.
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER MINI MOLD)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
PART NUMBER1 EIAJ2 REGISTERED NUMBER
PACKAGE OUTLINE
NE68618 2SC5180
NE68619 2SC5181
NE68630 2SC5179
NE68633 2SC5177
NE68639/39R 2SC5178/78R
39/39R
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN...
