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NE687M13 - NPN SILICON TRANSISTOR

General Description

NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements.

This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications.

Key Features

  • NEW.

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Datasheet Details

Part number NE687M13
Manufacturer CEL
File Size 221.95 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet NE687M13 Datasheet

Full PDF Text Transcription for NE687M13 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE687M13. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE687M13 FEATURES • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm pa...

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all transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 14 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 0.7±0.05 0.5+0.1 ñ0.05 0.2+0.1 ñ0.05 0.15+0.1 ñ0.05 (Bottom View) 0.3 • • 0.35 1.0+0.1 ñ0.05 0.7 LOW NOISE FIGURE: NF = 1.4 dB at 2 GHz 2 3 W2 0.35 1 0.15+0.1 ñ0.05 DESCRIPTION NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio application

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