Datasheet4U Logo Datasheet4U.com

NE851M13 - NPN SILICON TRANSISTOR

General Description

NEC's NE851M13 transistor is designed for oscillator applications up to 3 GHz.

Key Features

  • NEW.

📥 Download Datasheet

Datasheet Details

Part number NE851M13
Manufacturer CEL
File Size 266.11 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet NE851M13 Datasheet

Full PDF Text Transcription for NE851M13 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE851M13. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE851M13 FEATURES • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm pa...

View more extracted text
all transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 0.7±0.05 0.5+0.1 ñ0.05 0.15+0.1 ñ0.05 (Bottom View) 0.3 0.35 • • 2 1.0+0.1 ñ0.05 0.7 LOW PUSHING FACTOR 3 0.35 1 DESCRIPTION NEC's NE851M13 transistor is designed for oscillator applications up to 3 GHz. The NE851M13 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applicatio

More Datasheets from CEL

Part Number Description
NE851M03 NPN SILICON TRANSISTOR
NE851M33 NPN SILICON TRANSISTOR
NE85619 NPN SILICON EPITAXIAL TRANSISTOR
NE85619-A NPN SILICON EPITAXIAL TRANSISTOR
NE85619-T1-A NPN SILICON EPITAXIAL TRANSISTOR
NE85634 NPN SILICON RF TRANSISTOR
NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER