• Part: NE856M02
  • Description: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
  • Category: Transistor
  • Manufacturer: CEL
  • Size: 195.88 KB
NE856M02 Datasheet (PDF) Download
CEL
NE856M02

Description

E B E 0.42 ±0.06 1.5 3.0 0.45 ±0.06 0.42 ±0.06 3.95±0.26 C 2.45±0.1 0.25±0.02 PIN CONNECTIONS E: Emitter C: Collector B: Base.

Key Features

  • HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz HIGH IP3: 32 dBm TYP at 1 GHz NE856M02