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NE856M02 - NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

Datasheet Summary

Description

E B E 0.42 ±0.06 1.5 3.0 0.45 ±0.06 0.42 ±0.06 3.95±0.26 C 2.45±0.1 0.25±0.02 PIN CONNECTIONS E: Emitter C: Collector B: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE2 fT CRE3 |S21E|2 NF1 NF2 PARAMETERS AND CONDITIONS

Features

  • HIGH.

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Datasheet preview – NE856M02

Datasheet Details

Part number NE856M02
Manufacturer CEL
File Size 195.88 KB
Description NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Datasheet download datasheet NE856M02 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • • • HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz HIGH IP3: 32 dBm TYP at 1 GHz NE856M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 1.5±0.1 NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip.
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