NX6306 Datasheet | CEL

DESCRIPTION NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with In Ga As monitor PIN-PD. This device is ideal for Gigabit Ethernet and Synchronous Digital Hierarchy (SDH) system STM-1 (I-1, S-1.1, L-1.1), STM-4 (I-4, S-4.1, L-4.1), ITU-T remendations. NX6306S Series FEATURES - OPTICAL OUTPUT POWER: Po = 5.0 m W - LOW THRESHOLD CURRENT: lth = 10 m A @ TC = 25°C - HIGH SPEED: tr, tf = 0.5 ns MAX. - 40% REDUCTION OF MOUNTING AREA: 5-pin SOP × 2 - SIDE MODE SUPPRESSION RATIO: SWSR = 45 d B @ TYP. - In Ga As MONITOR PIN-PD - CAN PACKAGE: φ 5.6 mm - BASED ON TELCORDIA RELIABILITY NX6306G Series APPLICATIONS - 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1) - 622 Mb/s: STM-4 (I-4, S-4.1, L-4.1) - 1.25 Gb/s: Gigabit Ethernet The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. California Eastern Laboratories NX6306 Series PACKAGE DIMENSIONS (UNIT: mm) NX6306S Series 5.6 +0.00 -0.03 4.2±0.1 3.55±0.05 1.0±0.1 BOTTOM VIEW 0.3 +0.1 -0.0 110º±2º 2 3 0.3 +0.1 -0.0 0.25±0.03 (GLASS) 1.6±0.1 0.25 0.33 1.0 MIN. 15.0±1.0 1.2±0.1 2.1±0.15 PIN CONNECTIONS NX6306SH 1 (CASE) REFERENCE PLANE 2 PD 3 LD 4 2 PD 3 - 1 NX6306SK 1 (CASE) LD 4 LD CHIP 1.27±0.05 4- 0.45 2.0 P.C.D - 1 n = 1.48 Bolosilicate Glass NX6306G Series 5.6 +0.00 -0.03 4.3±0.1 3.75±0.05 1.0±0.1...