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NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN)
FEATURES
• HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% • LONG WAVELENGTH: λC = 1310 nm • INTERNAL THERMOELECTRIC COOLER, THERMISTOR • HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE • SINGLE MODE FIBER PIGTAIL
NX7361JB-BC
DESCRIPTION
NEC's NX7361JB-BC is a 1310 nm developed strained Multiple Quantum Well (st-MQW) structured pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical measurement equipment (OTDR).
NX7361JB-BC Datasheet
