package designed for SFF/SFP transceiver with LC duplex receptacle.
Key Features
Internal optical isolator.
Optical output power.
Peak emission wavelength.
Low threshold current.
Operating case temperature range.
Side mode suppression ratio.
InGaAs monitor PIN-PD
Pf = 2.0 mW.
p = 1 470 to 1 610 nm (Based on CWDM) lth = 10 mA TYP. @ TC = 25C TC = 20 to +85C SMSR = 40 dB
Document No. PL10791EJ01V0DS (1st edition) Date Published March 2010 NS.
Full PDF Text Transcription for NX8517XC (Reference)
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NX8517XC. For precise diagrams, and layout, please refer to the original PDF.
LASER DIODE NX8517XC Series 1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA 1550nm OTDR APPLICATION DESCRIPTION DIODE MODULE The NX8517XC is a 1 470 ...
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0nm OTDR APPLICATION DESCRIPTION DIODE MODULE The NX8517XC is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP transceiver with LC duplex receptacle. This device is ideal for 2.5 Gb/s CWDM application. FEATURES • Internal optical isolator • Optical output power • Peak emission wavelength • Low threshold current • Operating case temperature range • Side mode suppression ratio • InGaAs monitor PIN-PD Pf = 2.0 mW p = 1 470 to 1 610 nm (Based on CWDM) lth = 10 m
NX8517XC Datasheet
