NX8560SJ Datasheet | CEL

FEATURES - INTEGRATED ELECTRO-ABSORPTION MODULATOR - WAVELENGTH MONITOR FUNCTION - 10 Gb/s TRANSMISSION UP TO 40 KM SSMF - 7-PIN BUTTERFLY PACKAGE WITH GPO CONNECTOR - AVAILABLE FOR DWDM WAVELENGTH BASED ON ITU-T REMENDATION NX8560SJ Series DESCRIPTION NEC's NX8560SJ Series is an Electro-Absorption (EA) Modulator and wavelength monitor intergraded, 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode module. It is capable of transmitting up to 40 km standard single mode Þber (dispersion: 800 ps/nm) for 10 Gb/s applications with built in wavelength monitor. ELECTRO-OPTICAL CHARACTERISTICS (TLD = TSET, TC = -5 + 70°C, BOL unless otherwise speciÞed) PART NUMBER SYMBOLS TSET Iop VCENTER VMOD VFLD ITH Pf λp SMSR ER tr tf DP IS S11 PARAMETERS AND CONDITIONS Laser Set Temperature 1 Operating Current Modulation Center Voltage Modulation Voltage Forward Voltage of LD, IFLD = Iop Threshold Current Optical Output from Fiber, Under modulation2 Peak Emission Wavelength, IFLD = Iop, VEA = 0 V, TLD = TSET Side Mode Suppression Ratio, IFLD = Iop, VEA = 0 V Extinction Ratio, Under modulation2 Rise Time, 20-80%, Under modulation2 Fall Time, 80-20%, Under modulation Optical Isolation RF Return Loss, IFLD = IOP, VEA = 1 V, 50 Ω, f = 130 MHz to 5 GHz IFLD = IOP, VEA = 1 V, 50 Ω, f = 5 GHz to 10 GHz NX8560SJ Series UNITS °C m A V V V m A d Bm nm d B d B ps ps d B d B d B d B 23 -10 -8 -8 -5 -3 1528 30 10 7 -2 ITU-T3 > 37 11 40 40 2.0 1564 MIN 20 50 -2.0 2 60 TYP MAX 35 80 -0.5 3 2.0 20 Dispersion Penalty, 800 ps/nm under modulation2, 4 Note: 1. TSET is a certain point between 20°C and 35°C for ITU-T grid wavelength. 2. 40 km SMF under modulation, 9.95328 GB/S, PRBS 223_1, VEA = VCENTER ± 1/2VMOD, IFLD = Iop, NEC Test System Vcenter: a certain point between -2.0 V and -0.5 V. Vmod: a certain point 3 V or below. Iop: a certain point between 50 m A and 80 m A. 3. Available for DWDM wavelength based on ITU-T remendations (50 GHz grid). Please refer to...