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UPC3227TB - WIDEBAND AMPLIFIER

General Description

The µPC3227TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.

This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

Key Features

  • Low current.
  • Output power.
  • High linearity.
  • Power gain.
  • Noise Figure.
  • Supply voltage.
  • Port impedance : ICC = 4.8 mA TYP. @ VCC = 5.0 V : PO (sat) =.
  • 1.0 dBm TYP. @ f = 1.0 GHz : PO (sat) =.
  • 3.5 dBm TYP. @ f = 2.2 GHz : PO (1dB) =.
  • 6.5 dBm TYP. @ f = 1.0 GHz : PO (1dB) =.
  • 8.0 dBm TYP. @ f = 2.2 GHz : GP = 22.0 dB TYP. @ f = 1.0 GHz : GP = 22.0 dB TYP. @ f = 2.2 GHz : NF = 4.7 dB TYP. @ f = 1.0 GHz : NF.

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Datasheet Details

Part number UPC3227TB
Manufacturer CEL
File Size 217.50 KB
Description WIDEBAND AMPLIFIER
Datasheet download datasheet UPC3227TB Datasheet

Full PDF Text Transcription for UPC3227TB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UPC3227TB. For precise diagrams, and layout, please refer to the original PDF.

BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium (SiGe) monolithic integrated c...

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ON The µPC3227TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low current • Output power • High linearity • Power gain • Noise Figure • Supply voltage • Port impedance : ICC = 4.8 mA TYP. @ VCC = 5.0 V : PO (sat) = −1.0 dBm TYP. @ f = 1.0 GHz : PO (sat) = −3.5 dBm TYP. @ f = 2.2 GHz : PO (1dB) = −6.5 dBm TYP. @ f = 1.0 GHz : PO (1dB) = −8.0 dBm TYP. @ f = 2.2 GHz : GP = 22.0 dB TYP. @ f = 1.0 GHz : GP = 22.0 dB TYP. @ f = 2.2 GHz : NF = 4.7 dB TYP. @ f = 1.0

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