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UPC3232TB - SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER

General Description

The µPC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.

This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

Key Features

  • Low current.
  • Medium output power.
  • High linearity.
  • Power gain.
  • Gain flatness.
  • Noise figure.
  • Supply voltage.
  • Port impedance : ICC = 26.0 mA TYP. : PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz : PO (sat) = +12.0 dBm TYP. @ f = 2.2 GHz : PO (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz : PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz : GP = 32.8 dB MIN. @ f = 1.0 GHz : GP = 33.5 dB MIN. @ f = 2.2 GHz : ∆GP = 1.0 dB TYP. @ f = 1.0 to 2.2 GHz : NF =.

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Datasheet Details

Part number UPC3232TB
Manufacturer CEL
File Size 449.95 KB
Description SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
Datasheet download datasheet UPC3232TB Datasheet

Full PDF Text Transcription for UPC3232TB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UPC3232TB. For precise diagrams, and layout, please refer to the original PDF.

BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium (SiGe) monolithic i...

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R DESCRIPTION The µPC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low current • Medium output power • High linearity • Power gain • Gain flatness • Noise figure • Supply voltage • Port impedance : ICC = 26.0 mA TYP. : PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz : PO (sat) = +12.0 dBm TYP. @ f = 2.2 GHz : PO (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz : PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz : GP = 32.8 dB MIN. @ f = 1.0 GHz : GP = 33.5 dB MIN. @ f = 2.2 GHz : ∆