Datasheet Summary
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GaAs INTEGRATED CIRCUIT
NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH
DESCRIPTION
The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.
Features
- Low insertion loss : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz : LINS = 0.40 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.5 GHz
- High linearity : 2f0 = 70 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm : 3f0 = 75 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm
- 6-pin super minimold...