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1N4621 - SILICON ZENER DIODE

Download the 1N4621 datasheet PDF. This datasheet also covers the 1N4614 variant, as both devices belong to the same silicon zener diode family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR 1N4614 series silicon Zener diode is designed for low leakage, low current, and low noise applications.

Higher voltage devices are available in the 1N4099 series.

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Note: The manufacturer provides a single datasheet file (1N4614-CENTRALSEMICONDUCTOR.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N4614 THRU 1N4627 SILICON ZENER DIODE LOW NOISE 1.8 VOLT THRU 6.2 VOLT 250mW, 5% TOLERANCE DO-35 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4614 series silicon Zener diode is designed for low leakage, low current, and low noise applications. Higher voltage devices are available in the 1N4099 series. MARKING: Devices shall either be marked with the prefix ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table. MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 250 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.