OSD100-5T - General Purpose Silicon Sensors

CENTRONIC

Download the OSD100-5T datasheet PDF. This datasheet also covers the OSD1-5T variant, as both devices belong to the same general purpose silicon sensors family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

OSD100-5T general purpose silicon sensors by CENTRONIC - Datasheet Preview — Note: The manufacturer provides a single datasheet file (OSD1-5T_CENTRONIC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	OSD100-5T
Manufacturer	CENTRONIC
File Size	443.60 KB
Description	General Purpose Silicon Sensors
Datasheet	OSD100-5T Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
OSD100-5TA	Photovoltaic	OSI
OSD100-E	(OSDxx-E) Silicon Photodetectors	ETC
OSD1074	NPN/PNP Complementary Silicon Power Transistors	OSEN
OSD10N10	100V N-CHANNEL MOSFET	OSEN
OSD1-5T	(OSDxx-5T) Photovoltaic	OSI

Other Datasheets by CENTRONIC

Part Number	Description
OSD100-E	Silicon Photodetectors
OSD1-5T	(OSDxx-5T) General Purpose Silicon Sensors
OSD1-E	Silicon Photodetectors
OSD15-5T	General Purpose Silicon Sensors
OSD15-E	Silicon Photodetectors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

General Purpose Silicon Sensors (Series 5T) The Centronic Series 5T detectors offer high blue sensitivity coupled with high shunt resistance and low dark leakage current. They are particularly suited to low light level applications from 430-900 nm where the highest signal to noise ratio is important. They may be operated photovoltaically or with a reverse bias of up to 12V where lower capacitance is needed. The 5T range provides the most economic solution for all applications where high speed of response above 800 nm is not critical. Electrical / Optical Specifications Characteristics measured at 22°C (±2) ambient, and a reverse bias of 12 volts, unless otherwise stated. Shunt Resistance measured at ± 10mV.