Click to expand full text
CEP06N7/CEB06N7
CEF06N7
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP06N7 CEB06N7 CEF06N7
VDSS 700V 700V
700V
RDS(ON) 2Ω 2Ω
2Ω
ID @VGS 6A 10V 6A 10V 6A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263 TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM e
PD
700
±30
6 4 24 150
1
6 4d 24 d 48
0.
CEB06N7 Datasheet
