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CEP10N6/CEB10N6 CEF10N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP10N6 CEB10N6 CEF10N6
VDSS 600V 600V
600V
RDS(ON) 0.75Ω 0.75Ω
0.75Ω
ID 10A 10A 10A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM e
PD
600
±30
10 6 40 166 1.3
10d 6d 40 d 50 0.
CEB10N6 Datasheet
